Electrical atomic force microscopy for nanoelectronics
著者
書誌事項
Electrical atomic force microscopy for nanoelectronics
(Nanoscience and technology)
Springer, c2019
大学図書館所蔵 全4件
  青森
  岩手
  宮城
  秋田
  山形
  福島
  茨城
  栃木
  群馬
  埼玉
  千葉
  東京
  神奈川
  新潟
  富山
  石川
  福井
  山梨
  長野
  岐阜
  静岡
  愛知
  三重
  滋賀
  京都
  大阪
  兵庫
  奈良
  和歌山
  鳥取
  島根
  岡山
  広島
  山口
  徳島
  香川
  愛媛
  高知
  福岡
  佐賀
  長崎
  熊本
  大分
  宮崎
  鹿児島
  沖縄
  韓国
  中国
  タイ
  イギリス
  ドイツ
  スイス
  フランス
  ベルギー
  オランダ
  スウェーデン
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  アメリカ
注記
Includes bibliographical references
内容説明・目次
内容説明
The tremendous impact of electronic devices on our lives is the result of continuous improvements of the billions of nanoelectronic components inside integrated circuits (ICs). However, ultra-scaled semiconductor devices require nanometer control of the many parameters essential for their fabrication. Through the years, this created a strong alliance between microscopy techniques and IC manufacturing. This book reviews the latest progress in IC devices, with emphasis on the impact of electrical atomic force microscopy (AFM) techniques for their development. The operation principles of many techniques are introduced, and the associated metrology challenges described. Blending the expertise of industrial specialists and academic researchers, the chapters are dedicated to various AFM methods and their impact on the development of emerging nanoelectronic devices. The goal is to introduce the major electrical AFM methods, following the journey that has seen our lives changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.
目次
Introduction (U. Celano, W. Vandervorst).- Conductive AFM for nanoscale analysis of high-k dielectric metal oxides (C. Rodenbucher, M. Wojtyniak, K. Szot).- Mapping Conductance and Carrier Distribution in Confined Three-Dimensional Transistor Structures (A. Schulze, P. Eyben, K. Paredis, L. Wouters, U. Celano, W. Vandervorst).- Scanning Capacitance Microscopy for two-dimensional carrier profiling of semiconductor devices (J. Mody, J. Nxumalo).- Scanning probe lithography for nanopatterning and fabrication of high-resolution devices (Y. K. Ryu, A. W. Knoll).- Characterizing Ferroelectricity with an Atomic Force Microscopy: an all-around technique (S. Martin, B. Gautier, N. Baboux, A. Gruvermann, A. Carretero-Genevrier, M. Gich, A. Gomez).- Electrical AFM for the analysis of Resistive Switching (S. Brivio, J. Frascaroli, M. H. Lee).- Magnetic force microscopy for magnetic recording and devices (A. Hirohata, M. Samiepour, M. Corbetta).- Nanoscale space charge density profiling with KPFM and photoconductive C-AFM/KPFM (C. Villeneuve-Faure, K. Makasheva, L. Boudou, G. Teyssedre).- Electrical AFM of 2D materials and heterostructures for nanoelectronics (F. Giannazzo, G. Greco, F. Roccaforte, C. Mahata, M. Lanza).- Diamond probes technology (T. Hantschel, T. Conard, J. Kilpatrick, G. Cross).- Scanning Microwave Impedance Microscopy (sMIM) in electronic materials and quantum materials (K. Rubin, Y. Yang, O. Amster, D. Scrymgeour, S. Misra).
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