Advances in non-volatile memory and storage technology

著者

    • Magyari-Köpe, Blanka
    • Nishi, Yoshio

書誌事項

Advances in non-volatile memory and storage technology

edited by Blanka Magyari-Köpe, Yoshio Nishi

(Woodhead Publishing series in electronic and optical materials)

Woodhead Publishing, an imprint of Elsevier, c2019

2nd ed

  • : pbk

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注記

Includes bibliographical references and index

内容説明・目次

内容説明

Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.

目次

Part 1: Progress in nonvolatile memory research and application 1. OxRAM technology development and performances 2. Metal-oxide resistive random access memory (RRAM) technology: Material and operation details and ramifications 3. Advanced modeling and characterization techniques for innovative memory devices: The RRAM case 4. Mechanism of memristive switching in OxRAM 5. Interface effects on memristive devices 6. Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) 7. Spin-transfer-torque magnetoresistive random-access memory (STT-MRAM) technology 8. 3D-NAND Flash memory and technology 9. Advances in oxide-based conductive bridge memory (CBRAM) technology for computing systems 10. Selector devices for x-point memory Part 2: Emerging opportunities 11. Ferroelectric memories 12. Advances in nanowire PCM 13. Flexible and transparent ReRAM devices for system on panel (SOP) application 14. RRAM/memristor for computing 15. Emerging memory technologies for neuromorphic hardware 16. Neuromorphic computing with resistive switching memory devices

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詳細情報

  • NII書誌ID(NCID)
    BB28826573
  • ISBN
    • 9780081025840
  • 出版国コード
    uk
  • タイトル言語コード
    eng
  • 本文言語コード
    eng
  • 出版地
    Duxford, U.K.
  • ページ数/冊数
    xiii, 648 p.
  • 大きさ
    23 cm
  • 分類
  • 件名
  • 親書誌ID
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