Semiconductor Surfaces and Interfaces

Bibliographic Information

Semiconductor Surfaces and Interfaces

Winfried Mönch

(Springer series in surface sciences, 26)

Springer-verlag Berlin Heidelberg, c2001

3rd, rev. ed

  • : softcover

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Note

Originally published by Springer-verlag Berlin Heidelberg New York in 2001

Softcover version of original hardcover 3rd edition 2001

Includes bibliographical references and indexes

Description and Table of Contents

Description

This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.

Table of Contents

1. Introduction.- 2. Surface Space-Charge Region in Thermal Equilibrium.- 3. Surface States.- 4. Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium.- 5. Surface S pace-Charge Region in Non-Equilibrium.- 6. Interface States.- 7. Cleaved {110} Surfaces of III-V and II-VI Compound Semiconductors.- 8. {100} Surfaces of III-V, II-VI, and I-VII Compound Semiconductors with Zincblende Structure.- 9. {100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide.- 10. Diamond, Silicon, and Germanium {111}-2 x 1 Surfaces.- 11. Si(111)-7 x 7 and Ge(111)-c(2 x 8) Surfaces.- 12. Phase Transitions on Silicon and Germanium {111} Surfaces.- 13. {111} Surfaces of Compounds with Zincblende Structure.- 14. Monovalent Adatoms.- 15. Group-III Adatoms on Silicon Surfaces.- 16. Group-V Adatoms.- 17. Oxidation of Silicon and III-V Compound Semiconductors.- 18. Surface Passivation by Adsorbates and Surfactants.- 19. Semiconductor Interfaces.- References.- Index of Reconstructions and Adsorbates.

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Details
  • NCID
    BC04618116
  • ISBN
    • 9783642087486
  • Country Code
    gw
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    Berlin
  • Pages/Volumes
    xvi, 548 p.
  • Size
    24 cm
  • Classification
  • Parent Bibliography ID
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