Epitaxy of semiconductors : physics and fabrication of heterostructures
著者
書誌事項
Epitaxy of semiconductors : physics and fabrication of heterostructures
（Graduate texts in physics）
Springer, c2020
2nd ed
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注記
Includes bibliographical references and index
収録内容
- Introduction
- Structural properties of heterostructures
- Structure of organic crystals
- Electronic properties of heterostructures
- Electronic properties of organic semiconductors
- Thermodynamics of epitaxial layer-growth
- Atomistic aspects of epitaxial layer-growth
- In situ growth analysis
- Application of surfactants
- Doping, diffusion, and contacts
- Methods of epitaxy
- Special growth techniques
内容説明・目次
内容説明
The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today's advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.
目次
1 Introduction1.1 Epitaxy1.2 Issues of Epitaxy2 Structural Properties of Heterostructures2.1 Basic Crystal Structures2.2 Elastic Properties of Heterostructures2.3 Dislocations2.4 Defects in Organic Crystals2.5 Structural Characterization using X-ray Diffraction3 Electronic Properties of Heterostructures3.1 Bulk Properties3.2 Band Offsets3.3 Electronic States in Low-Dimensional Structures4 Thermodynamics of Epitaxial Layer-Growth4.1 Phase Equilibria4.2 Crystalline Growth5 Atomistic Aspects of Epitaxial Layer-Growth5.1 Surface Structure5.2 Kinetic Process Steps in Layer Growth5.3 Self-Organized Nanostructures6 In situ Growth Monitoring6.1 Surface Probes6.2 Electron Diffraction Techniques6.3 Optical Techniques7 Application of Surfactants7.1 Surfactant Effect7.2 Surfactant-Assisted Epitaxy8 Doping, Diffusion, and Contacts8.1 Doping of Semiconductors8.2 Diffusion8.3 Metal-Semiconductor Contact9 Methods of Epitaxy9.1 Liquid Phase Epitaxy9.2 Metallorganic Vapor Phase Epitaxy9.3 Molecular Beam Epitaxy10 Special Growth Techniques10.1 Growth of Buffer Layers10.2 Atomic Layer Epitaxy and Related Techniques10.3 Selective-Area Epitaxy10.4 Vapor-Liquid-Solid Growth
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