High-k materials in multi-gate FET devices

Author(s)

• Tayal, Shubham
• Singla, Parveen
• Davim, J. Paulo

Bibliographic Information

High-k materials in multi-gate FET devices

edited by Shubham Tayal, Parveen Singla, and J. Paulo Davim

（Science, technology, and management series / series editor, J. Paulo Davim）

CRC Press, 2021

1st. ed

• : hbk

Note

Includes bibliographical references and index

Details

• NCID: BC08858596
• ISBN:
  • 9780367639686
• LCCN: 2021029732
• Country Code: us
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Boca Raton
• Pages/Volumes: xv, 164 p.
• Size: 24 cm
• Classification:
  • DC23 : 621.381528
  • LCC : QD551
  • DC23 : 537/.24
• Subject Headings:
  • LCSH : Field-effect transistors
  • LCSH : Dielectrics
  • LCSH : Electrochemistry
• Parent Bibliography ID:
  • BB2813368X