Handbook of GaN semiconductor materials and devices
著者
書誌事項
Handbook of GaN semiconductor materials and devices
CRC Press, 2019, c2018
- : pbk
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注記
"First issued in paperback 2019"--T.p. verso
Includes bibliographical references
内容説明・目次
内容説明
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.
Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China.
Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China.
Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA.
Bo Shen is the Cheung Kong Professor at Peking University in China.
目次
Section I Fundamentals
1 III-Nitride Materials and Characterization
Bo Shen, Ning Tang, XinQiang Wang, ZhiZhong Chen, FuJun Xu, XueLin Yang, TongJun Yu, JieJun Wu, ZhiXin Qin, WeiYing Wang, YuXia Feng, and WeiKun Ge
2 Microstructure and Polarization Properties of III-Nitride Semiconductors
Fernando A. Ponce
3 Optical Properties of III-Nitride Semiconductors
Plamen P. Paskov and Bo Monemar
4 Electronic and Transport Properties of III-Nitride Semiconductors
Yuh-Renn Wu
Section II Growth and Processing
5 Growth Technology for GaN and AlN Bulk Substrates and Templates
Michael Slomski, Lianghong Liu, John F. Muth, and Tania Paskova
6 III-Nitride Metalorganic Vapor-Phase Epitaxy
Daniel D. Koleske
7 Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications
Shizhao Fan, Songrui Zhao, Faqrul A. Chowdhury, Renjie Wang, and Zetian Mi
8 Advanced Optoelectronic Device Processing
Fengyi Jiang
Section III Power Electronics
9 Principles and Properties of Nitride-Based Electronic Devices
An-Jye Tzou, Chun-Hsun Lee, Shin-Yi Ho, Hao-Chung (Henry) Kuo, and Jian-Jang Huang
10 Power Conversion and the Role of GaN
Srabanti Chowdhury
11 Recent Progress in GaN-on-Si HEMT
Kevin J. Chen and Shu Yang
12 Reliability in III-Nitride Devices
Davide Bisi, Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni
Section IV Light Emitters
13 Internal Quantum Efficiency for III-Nitride Based Blue Light-Emitting Diodes
Zi-Hui Zhang, Yonghui Zhang, Hilmi Volkan Demir, and Xiao
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