CiNii 図書 - Fundamentals of modern VLSI devices

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

Prefaces
Physical constants and unit conversions
List of symbols
1. Introduction
2. Basic device physics
3. p–n junctions and metal–silicon contacts
4. MOS capacitors
5. MOSFETs: long channel
6. MOSFETs: short channel
7. Silicon-on-insulator and double-gate MOSFETs
8. CMOS performance factors
9. Bipolar devices
10. Bipolar device design
11. Bipolar performance factors
12. Memory devices
References
Index.

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Fundamentals of modern VLSI devices

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