Fundamentals of modern VLSI devices
Author(s)
Bibliographic Information
Fundamentals of modern VLSI devices
Cambridge University Press, 2022
3rd ed
- : hardback
Available at / 16 libraries
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Hokkaido University, Faculty and Graduate School of Engineering図書
: hardback621.39/T1943580348505
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Note
Includes bibliographical references (p. 565-586) and index
Description and Table of Contents
Description
A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
Table of Contents
- Prefaces
- Physical constants and unit conversions
- List of symbols
- 1. Introduction
- 2. Basic device physics
- 3. p–n junctions and metal–silicon contacts
- 4. MOS capacitors
- 5. MOSFETs: long channel
- 6. MOSFETs: short channel
- 7. Silicon-on-insulator and double-gate MOSFETs
- 8. CMOS performance factors
- 9. Bipolar devices
- 10. Bipolar device design
- 11. Bipolar performance factors
- 12. Memory devices
- References
- Index.
by "Nielsen BookData"
