Advanced gate stack, source/drain, and channel engineering for si-based CMOS 6 : new materials, processes, and equipment

Author(s)

    • Gusev, E. P.

Bibliographic Information

Advanced gate stack, source/drain, and channel engineering for si-based CMOS 6 : new materials, processes, and equipment

editors, E.P. Gusev ... [et al.]

(ECS transactions, v. 28, no.1)

Electrochemical Society, c2010

  • : hardcover

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Details

  • NCID
    BC12706988
  • ISBN
    • 9781566777919
  • Country Code
    us
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    Pennington, N.J.
  • Pages/Volumes
    x, 412 p.
  • Size
    23 cm
  • Parent Bibliography ID
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