Semiconductor nanophotonics : materials, models, and devices
著者
書誌事項
Semiconductor nanophotonics : materials, models, and devices
（Springer series in solid-state sciences, v.194）
Springer, [2020]
- pbk
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing.
The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.
目次
Introduction
(Kneissl)
PART A: Semiconductor Nanostructures
(Hoffmann)
Submonolayer Quantum Dots
(Owschimikow, Pohl, Schliwa, Strittmatter, Eisele Dahne, Lehmann, Niermann, Herzog, Lignau)
Carrier localization in Submonolayer Quantum Dots
b. Epitaxy of SML QDs
c. Structure of Submonolayer Depositions
d. Static and Dynamic Optical and Electronic Properties of SML QDs
e. Devices based on SML Quantum dots
f. Conclusion and Perspectives
Stressor-Induced Site Control of Quantum Dots for Single-Photon Sources
(Pohl, Schliwa, Strittmatter, Niermann, Lehmann, Kantner, Wunsche Bandelow, Koprucki)
Stressor-Induced Nucleation of Quantum Dots
Simulation of Strain in Semiconductors
Nucleation Control by a Buried Aperture Stressor
Strain Measurements by means of Electron Holography
Single-Photon Source based on Stressor-Induced QD Site Control
f. Realization of an efficient current Injection into a single site-controlled quantum dot
g. Conclusion and Perspectives
Coherent and incoherent dynamics in quantum dots and nanophotonic devices
(Ludge, Owschimikow, Lingnau, Kolarczik, Woggon, Vladimirov, Pimenov, Wolfrum, Meinecke)
Introduction
Ultrafast carrier dynamics in semiconductors with reduced dimensionality: Quantum-dots, submonolayer QDs and crossed excitons
Quantum state tomography and dynamics of Wigner functions
Dynamics and timing jitter in multisection mode-locked laser diodes
Conclusion and Outlook
Optical and Structural Properties of Nitride based Nanostructures
(Hoffmann, Christen, Wagner, Bertram, Maultzsch, Eisele)
Introduction
b. Modern tools for nanostructure characterization
c. Analysis of nanostructure growth in nitrides
d. Optical analysis of low-dimensional nitrides
e. Conclusion and Perspectives
Theory of spectroscopy and light emission of semiconductor nanostructures
(Knorr, Kuhn, Selig, Camele, Richter)
Introduction
State of the art of microscopic description of quantum dots and atomically thin semiconductors
Coupled quantum dot-cavity structures
Radiative emission of confined many particle configurations
Intraband transitions between bound QD states and states of the host medium
Two-dimensional spectroscopy in semiconductor nanostructures
Conclusion and Outlook
PART B: Nanophotonics Devices
(Kneissl, Reitzenstein)
Multi-Dimensional modelling and simulation of nanophotonic devices
(Bandelow, Koprucki, Burger, Kantner, Wunsche, Mielke, Schmidt, Rotundo, Hoehne)
a. Introduction
b. Statement of the problem
c. Multispecies modelling of QD lasers
d. Quantum-classical hybrid modelling of SPEs and nanolasers with few QDs
e. Numerical methods for drift-diffusion
f. Numerical methods for Maxwell equations
g. Applications
h. Conclusion and Outlook
Deterministic quantum devices for optical quantum communication
(Rodt, Burger, Koprucki, Kantner)
a. Introduction
b. Numeric modelling and optimization of quantum devices for the generation and distribution of single photons
c. Deterministic fabrication technologies
d. Quantum light sources based on deterministic quantum dot microlenses
e. On-chip quantum circuits with deterministically-integrated quantum dots
f. Conclusion and Outlook
Quantum networks based on single photons
(Roediger, Perlot, Benson, Freund)
a. Introduction
b. Single Photon Generation & Manipulation
c. Frequency Conversion of Quantum Light
d. Single Photon Storage
e. Quantum Communication
f. Free-Space Quantum Link
g. Conclusion and Outlook
Vertical-cavity surface-emitting lasers (VCSELs) for communication, sensing, and integration
(Lott)
a. Introduction
b. State-of-the-art VCSELs
c. VCSELs for communication
d. VCSELs for sensing
e. VCSELs for integration
f. VCSEL frontiers
g. Conclusion and Outlook
VCSEL-based silicon photonic interconnect technologies
(Seiler, Tillack, Zimmermann)
a. Introduction
b. State of the art interconnect technologies and requirements
c. Long-wavelength VCSELs
d. Characterization of 1.3m and 1.55m InP-VCSELs
e. Modeling of VCSEL-based coherent interconnects
f. VCSEL-based PAM transmission link
g. VCSEL-based QPSK transmission link
h. Conclusion and Outlook
Nitride microcavities for classical and non-classical light emitters
(Dadgar, Strittmatter, Betram, Schliwa, Hoffmann, Mautzsch, Christen, Wagner)
Introduction
Bragg mirrors, GaN quantum dots and microcavities
Microstructure and emission properties
d. Towards devices
e. Conclusion and Perspectives
Group III-nitride-based laser diodes
(Kneissl, Wernicke, Sulmoni, Kuhn, Weyers)
a. State-of-the-art in group III-nitride laser diode technologies
b. Design of AlGaN-based deep UV laser diodes
c. Fabrication of AlGaN-based UV laser diodes
d. Low defect density AlN templates
e. Growth of AlGaN laser heterostructures
f. Gain and losses in deep UV AlGaN lasers by optical pumping
g. Development of current-injection deep UV laser diodes
h. Conclusion and Outlook
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