Silicon quantum integrated circuits : silicon-germanium heterostructure devices : basics and realisations
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Bibliographic Information
Silicon quantum integrated circuits : silicon-germanium heterostructure devices : basics and realisations
（Nanoscience and technology）
Springer, c2005
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Includes bibliographical references
Description and Table of Contents
Description
Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Table of Contents
Material Science.- Resume of Semiconductor Physics.- Realisation of Potential Barriers.- Electronic Device Principles.- Heterostructure Bipolar Transistors - HBTs.- Hetero Field Effect Transistors (HFETs).- Tunneling Phenomena.- Optoelectronics.- Integration.- Outlook.
by "Nielsen BookData"