{"@context":{"owl":"http://www.w3.org/2002/07/owl#","bibo":"http://purl.org/ontology/bibo/","foaf":"http://xmlns.com/foaf/0.1/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/"},"@id":"https://ci.nii.ac.jp/ncid/BD12516844.json","@graph":[{"@id":"https://ci.nii.ac.jp/ncid/BD12516844#entity","@type":"bibo:Book","foaf:isPrimaryTopicOf":{"@id":"https://ci.nii.ac.jp/ncid/BD12516844.json"},"dc:title":[{"@value":"Systematic survey of innovation in transparent oxide semiconductor \"IGZO\" for next-generation thin-film transistors"}],"dcterms:alternative":["薄膜トランジスタ用透明酸化物半導体材料の系統化調査 : IGZO系酸化物半導体材料の創製経緯と技術波及"],"dc:creator":"Masayuki SuzukiSea ice research and engineering development / Naoki Nakazawa","dc:publisher":[{"@value":"National Museum of Nature and Science"}],"dcterms:extent":"128 pages","cinii:size":"30 cm","dc:language":"eng","dc:date":"2024","cinii:ncid":"BD12516844","cinii:ownerCount":"1","foaf:maker":[{"@type":"foaf:Person","foaf:name":[{"@value":"鈴木, 真之"},{"@value":"スズキ, マサユキ","@language":"ja-hrkt"}]},{"@id":"https://ci.nii.ac.jp/author/DA00862718#entity","@type":"foaf:Person","foaf:name":[{"@value":"国立科学博物館"},{"@value":"コクリツ カガク ハクブツカン","@language":"ja-hrkt"}]}],"bibo:owner":[{"@id":"https://ci.nii.ac.jp/library/FA009563","@type":"foaf:Organization","foaf:name":"国立科学博物館","rdfs:seeAlso":{"@id":"https://lib.kahaku.go.jp/opac/search?target=local&searchmode=complex&autoDetail=true&s_ncid=BD12516844"}}],"prism:publicationDate":["[2024]"],"cinii:note":["Content Type: text (ncrcontent), Media Type: unmediated (ncrmedia), Carrier Type: volume (ncrcarrier)","Cover title","Translation of extracts from National Museum of Nature and Science, survey report on the systemization of technology, volume 32, March 2023","Includes bibliographical references"]}]}