{"@context":{"owl":"http://www.w3.org/2002/07/owl#","bibo":"http://purl.org/ontology/bibo/","foaf":"http://xmlns.com/foaf/0.1/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/"},"@id":"https://ci.nii.ac.jp/ncid/BN11741095.json","@graph":[{"@id":"https://ci.nii.ac.jp/ncid/BN11741095#entity","@type":"bibo:Book","foaf:isPrimaryTopicOf":{"@id":"https://ci.nii.ac.jp/ncid/BN11741095.json"},"dc:title":[{"@value":"超高真空走査電顕による半導体上の金属エピタクシー過程の原子像観察と局所解析"},{"@value":"チョウコウシンクウ ソウサ デンケン ニヨル ハンドウタイジョウ ノ キンゾク エピタクシー カテイ ノ ゲンシゾウ カンサツ ト キョクショ カイセキ","@language":"ja-hrkt"}],"dc:creator":"研究代表者 井野正三","dc:publisher":[{"@value":"井野正三"}],"dcterms:extent":"1冊","cinii:size":"30cm","dc:language":"jpneng","dc:date":"1994","cinii:ncid":"BN11741095","cinii:ownerCount":"1","foaf:maker":[{"@id":"https://ci.nii.ac.jp/author/DA03022950#entity","@type":"foaf:Person","foaf:name":[{"@value":"井野, 正三"},{"@value":"イノ, ショウゾウ","@language":"ja-hrkt"}]},{"@id":"https://ci.nii.ac.jp/author/DA07630313#entity","@type":"foaf:Person","foaf:name":[{"@value":"長谷川, 修司"},{"@value":"ハセガワ, シュウジ","@language":"ja-hrkt"}]}],"bibo:owner":[{"@id":"https://ci.nii.ac.jp/library/FA001787","@type":"foaf:Organization","foaf:name":"東京大学 総合図書館","rdfs:seeAlso":{"@id":"https://opac.dl.itc.u-tokyo.ac.jp/opac/opac_openurl/?ncid=BN11741095"}}],"prism:publicationDate":["1994"],"cinii:note":["平成4-5年度科学研究費補助金(一般研究B)研究成果報告書","研究課題番号: 04452035","研究分担者: 長谷川修司, 霜越文夫"],"cinii:contentOfWorks":["Glancing angle dependence of the X-ray emission measured under total reflection angle X-ray spectroscopy (TRAXS) condition during Reflection High Energy Electron Diffraction Observation / Toshio Yamanaka[ほか]","Grazing exit X-ray fluorescence spectroscopy for thin-film analysis / Takashi Noma[ほか]","Reflection high-energy electron diffraction study of the growth of Ge on the Ge(111) surface / Katsuyuki Fukutani[ほか]","In situ observation of the growth process of the InAs-GaAs heteroepitaxial system using scanning microprobe reflection high energy electron diffraction-total reflection angle X-ray spectroscopy / S. Shimizu[ほか]","Epitaxial growth of metals on Si and Ge investigated by Rheed-Traxs and UHV-SEM / Shozo Ino[ほか]","Competitive kinetic processes during homoepitaxial growth on Ge(111) / T. Yokotsuka[ほか]","Hysteresis in phase transitions at clean and Au-covered Si(111) surfaces / Shuuji Hasegawa[ほか]","Incorporation and diffusion kinetics during epitaxial growth on Ge(111) / T. Yokotsuka","Observation of the Ag/Si(111) system using a high-resolution ultra-high vacuum scanning electron microscope / Akira Endo and Shozo Ino","Observations of the Au/Si(111) system with a high-resolution ultrahigh-vacuum scanning electron microscope / Akira Endo and Shozo Ino"]}]}