干川 圭吾 HOSHIKAWA Keigo

ID:1000010231573

信州大学工学部 Faculty of Engineering, Shinshu University (2015年 CiNii収録論文より)

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Articles:　 1-20 of 57

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  • Vertical Bridgman Growth of Various Kinds of Single Crystals(<Special Issue>Recent Advance in Functional Single Crystals)  [in Japanese]

    Hoshikawa Keigo

    Improved vertical Bridgman growth techniques for various kinds of single crystal are introduced and discussed. In the first, compound semiconductors of GaAs and InP are grown by the liquid encapsulate …

    Journal of the Japanese Association for Crystal Growth 42(2), 110-118, 2015

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  • Growth of potassium tantalate single crystal by the directional solidification method  [in Japanese]

    TAKENAKA Takayuki , BANBA Noriko , HOSHIKAWA Keigo

    本研究では、現在タンタル酸カリウム(KTaO_3、KT)単結晶育成に用いられているTSSG法に比べ、育成速度が速く、形状制御が容易なブリッジマン(VB)法によるKT単結晶育成を試みている。原料全てを固化するVB法では原料組成が重要であるため、まず一方向凝固によりKT結晶を作製し、その固化状況からVB法でのKT単結晶育成の可能性及び最適組成を調べた。その結果、原料組成を化学量論組成であるK:Ta=5 …

    IEICE technical report 110(261), 7-11, 2010-10-21

    References (1)

  • Neckless Growth of Dislocation-free Czochralski Silicon Crystals(<Special Issue>Basic Concept Enables Breakthrough)  [in Japanese]

    Hoshikawa Keigo , Taishi Toshinori , Huang Xinming

    The scientific and technological backgrounds for the growth method of dislocation-free Czochralski silicon crystals without thin necks is introduced, and the development of the neckless growth method …

    Journal of the Japanese Association for Crystal Growth 34(1), 17-22, 2007

    J-STAGE  References (11)

  • Electric Properties of Langasite Single Crystal Grown By Vertical Bridgman Method  [in Japanese]

    TAISHI Toshinori , KATO Kentaro , HAYASHI Takayuki , BAMBA Noriko , HOSHIKAWA Keigo , FUKAMI Tatsuo

    近年SAWフィルタや圧力センサ用の圧電材料として注目されているランガサイト(La_3Ga_5SiO_<14>)単結晶を、酸素を含まない還元雰囲気下で垂直ブリッジマン(VB)法により育成し、電気的特性を評価した。ランガサイトはチョクラルスキー(CZ)法により酸素含有雰囲気下で育成され、透明でオレンジ色を呈することが一般認識であるが、本研究ではAr雰囲気下で無色透明なランガサイト単結晶の育 …

    Technical report of IEICE. OME 105(141), 7-10, 2005-06-17

    References (6)

  • Electric Properties of Langasite Single Crystal Grown By Vertical Bridgman Method  [in Japanese]

    TAISHI Toshinori , KATO Kentaro , HAYASHI Takayuki , BAMBA Noriko , HOSHIKAWA Keigo , FUKAMI Tatsuo

    近年SAWフィルタや圧力センサ用の圧電材料として注目されているランガサイト(La_3Ga_5SiO_<14>)単結晶を、酸素を含まない還元雰囲気下で垂直ブリッジマン(VB)法により育成し、電気的特性を評価した。ランガサイトはチョクラルスキー(CZ)法により酸素含有雰囲気下で育成され、透明でオレンジ色を呈することが一般認識であるが、本研究ではAr雰囲気下で無色透明なランガサイト単結晶の育 …

    IEICE technical report. Component parts and materials 105(140), 7-10, 2005-06-17

    References (6)

  • Electric Properties of Langasite Single Crystal Grown By Vertical Bridgman Method  [in Japanese]

    TAISHI Toshinori , KATO Kentaro , HAYASHI Takayuki , BAMBA Noriko , HOSHIKAWA Keigo , FUKAMI Tatsuo

    近年SAWフィルタや圧力センサ用の圧電材料として注目されているランガサイト(La_3Ga_5SiO_<14>)単結晶を、酸素を含まない還元雰囲気下で垂直ブリッジマン(VB)法により育成し、電気的特性を評価した。ランガサイトはチョクラルスキー(CZ)法により酸素含有雰囲気下で育成され、透明でオレンジ色を呈することが一般認識であるが、本研究ではAr雰囲気下で無色透明なランガサイト単結晶の育 …

    IEICE technical report. EMD 105(139), 7-10, 2005-06-17

    References (6)

  • 19aB06 Langataite single crystal growth by vertical Bridgman method and evaluation of electric properties(NCCG-35)  [in Japanese]

    Taishi T. , Kato K. , Hayashi T. , Endo N. , Bamba N. , Fukami T. , Hoshikawa K.

    Langataite single crystals were grown by vertical Bridgman method and its electrical properties were investigated. A brown-colored langataite crystal 1 inch in diameter could be grown from stoichiomet …

    Journal of the Japanese Association for Crystal Growth 32(3), 258, 2005

    J-STAGE  References (3)

  • Reaction at the interface between silica crucible and Si melt : effect of Ba doping  [in Japanese]

    HUANG X. , KOH S. , WATANABE H. , SANPEI K. , HOSHIKAWA K. , UDA S.

    日本結晶成長学会誌 = Journal of the Japanese Association for Crystal Growth 31(3), 105, 2004-08-25

  • Piezoelectric Properties of KNbO_3 Crystal Grown by Vertical Bridgman Method  [in Japanese]

    KUDO Kenichi , KAKIUCHI Kenji , ENDO Naoyuki , BANBA Noriko , HOSHIKAWA Keigo , FUKAMI Tatsuo

    垂直ブリッジマン法により,直径10mmのニオブ酸カリウム単結晶を育成することに成功した.この単結晶から6×3×0.5mm^3の矩形板を切り出し,分極電界の大きさを変えながら比誘電率,共振周波数および共振-反共振の間の位相を観察した.[001]_<pc>に分極した結晶では,電界を上げるにつれて一旦比誘電率は増加したが,その後は減少した.[101]_<pc>に分極した結晶では, …

    Technical report of IEICE. OME 104(160), 33-38, 2004-06-25

    References (9)

  • Piezoelectric Properties of KNbO_3 Crystal Grown by Vertical Bridgman Method  [in Japanese]

    KUDO Kenichi , KAKIUCHI Kenji , ENDO Naoyuki , BANBA Noriko , HOSHIKAWA Keigo , FUKAMI Tatsuo

    垂直ブリッジマン法により,直径10mmのニオブ酸カリウム単結晶を育成することに成功した.この単結晶から6×3×0.5mm^3の矩形板を切り出し,分極電界の大きさを変えながら比誘電率,共振周波数および共振-反共振の間の位相を観察した.[001]_<pc>に分極した結晶では,電界を上げるにつれて一旦比誘電率は増加したが,その後は減少した.[101]_<pc>に分極した結晶では, …

    IEICE technical report. EMD 104(158), 33-38, 2004-06-25

    References (9)

  • Piezoelectric Properties of KNbO_3 Crystal Grown by Vertical Bridgman Method  [in Japanese]

    KUDO Kenichi , KAKIUCHI Kenji , ENDO Naoyuki , BANBA Noriko , HOSHIKAWA Keigo , FUKAMI Tatsuo

    垂直ブリッジマン法により,直径10mmのニオブ酸カリウム単結晶を育成することに成功した.この単結晶から6×3×0.5mm^3の矩形板を切り出し,分極電界の大きさを変えながら比誘電率,共振周波数および共振-反共振の間の位相を観察した.[001]_<pc>に分極した結晶では,電界を上げるにつれて一旦比誘電率は増加したが,その後は減少した.[101]_<pc>に分極した結晶では, …

    IEICE technical report. Component parts and materials 104(159), 33-38, 2004-06-25

    References (9)

  • 25aA03 Reaction at the interface between silica crucible and Si melt : effect of Ba doping(NCCG-34)  [in Japanese]

    Huang X. , Koh S. , Watanabe H. , Sanpei K. , Hoshikawa K. , Uda S.

    Reaction at the interface between Ba-doped silica crucible and Si melt for Czochralski Si (CZ-Si) crystal growth has been studied. It is found that appropriate Ba-doping in a silica crucible results i …

    Journal of the Japanese Association for Crystal Growth 31(3), 105, 2004

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  • 26aD02 Langasite crystal growth by vertical Bridgman method under reducing atmosphere(NCCG-34)  [in Japanese]

    Taishi T. , Kato K. , Durand A. , Hayashi T. , Fujiwara K. , Fukami T. , Hoshikawa K.

    Langasite crystals 1 inch in diameter were grown by vertical Bridgman method under reducing atmosphere without oxygen gas flow. When a growth rate was 1mm/h a transparent and non-colored langasite sin …

    Journal of the Japanese Association for Crystal Growth 31(3), 231, 2004

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  • A Direction Solidification on Potassium Niobate Crystal by Crucible Encapsulated Vertical Bridgman Method  [in Japanese]

    KUDO K. , KAKIUCHI K. , MIZUTANI K. , HOSHIKAWA K. , FUKAMI T.

    KNbO_3 crystal was grown by Vertical Bridgman method using encapsulated crucible into stoichiometry materials. Initial crystal was K_4Nb_6O_<17> whose composition was Nb-rich and final crystal w …

    Journal of the Japanese Association for Crystal Growth 30(3), 71, 2003

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  • An analysis of diffusion of boron during solidification  [in Japanese]

    Liu L. , KAKIMOTO K. , TAISHI T. , HOSHIKAWA K.

    The numerical calculation was carried out to estimate the mechanism of boron diffusion during seeding process. The analysis clarified that diffusion in solid is a main factor of boron distribution in …

    Journal of the Japanese Association for Crystal Growth 30(3), 61, 2003

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  • Investigation of propagation behavior and three-dimensional structure of dislocation in CZ-Si crystal ingots at SPring-8  [in Japanese]

    Taishi T. , Hoshikawa K. , Iida S. , Dedukuri M. , Kajiwara K. , Suzuki Y. , Chikaura Y. , Kawado S.

    Si crystal ingots 1-2 inches in diameter were nondestructively examined by high-energy synchrotron-radiation X-ray topography at SPring-8. Dislocations were drastically propagated and multiplied in li …

    Journal of the Japanese Association for Crystal Growth 30(3), 60, 2003

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  • Ga-doped CZ-Si crystal growth  [in Japanese]

    Hoshikawa T. , Taishi T. , Oishi S. , Hoshikawa K.

    Ga-doped Si crystals with different Ga concentration were grown by CZ method, and Ga concentration in the grown crystals were compared with coresponding initial Ga concentration in silicon melts. It w …

    Journal of the Japanese Association for Crystal Growth 30(3), 59, 2003

    J-STAGE  References (2)

  • Optical absorption due to electron-irradiation induced point defects in p-type silicon crystals  [in Japanese]

    Tokuyama Y. , Fukata N. , Suezawa M. , Taishi T. , Hoshikawa K.

    Meeting Abstracts of the Physical Society of Japan 58.1.4(0), 930, 2003

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  • Dislocation-free CZ-Si Crystal Growth without Thin Neck(<Special Issue>Science and Technology in Crystal Growth)  [in Japanese]

    Hoshikawa Keigo , Taishi Toshinori , Huang Xinming

    It is found that dislocation-free silicon crystal growth is possible without a thin neck proposed by Dash at 40 years ago and established as the critical step to obtain dislocation-free silicon crysta …

    Journal of the Japanese Association for Crystal Growth 29(5), 413-422, 2002

    J-STAGE  References (16)

  • Growth of Calcium Molybdate Crystals from Sodium Chloride Flux  [in Japanese]

    Fuijta Yoko , Suzuki Takaomi , Oishi Shujj , Shishido Toetsu , Taishi Toshinori , Hoshikawa Keigo

    Calcium molybdate crystals were grown from a sodium chloride flux. Effect of cooling conditions on the crystal growth was investigated. The crystals obtained were colorless and transparent The crystal …

    Journal of the Japanese Association for Crystal Growth 29(2), 113, 2002

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