大見 忠弘 Ohmi Tadahiro

ID:1000020016463

東北大学未来科学技術共同研究センター New Industry Creation Hatchery Center, Tohoku University (2014年 CiNii収録論文より)

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Articles:  1-20 of 407

  • Analysis of trap density causing random telegraph noise in MOSFETs  [in Japanese]

    OBARA Toshiki , TERAMOTO Akinobu , Kuroda Rihito , YONEZAWA Akihiro , GOTO Tetsuya , SUWA Tomoyuki , SUGAWA Shigetoshi , OHMI Tadahiro

    The incidence ratio of Random Telegraph Noise in 131,072 MOSFETs was evaluated statistically by using array test circuit. The Correlation between multi traps in three and four states RTN were evaluate …

    Technical report of IEICE. SDM 114(255), 55-59, 2014-10-16

  • Study on compositional transition layers at Si_3N_4/Si interface formed by radical nitridation  [in Japanese]

    SUWA Tomoyuki , TERAMOTO Akinobu , SUGAWA Shigetoshi , OHMI Tadahiro

    The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on the Si_3N_4/Si interface were measured with the probing depth of nearly 2 nm. It was clarified the compositi …

    Technical report of IEICE. SDM 114(255), 31-34, 2014-10-16

  • Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology

    GOTO Tetsuya , KURODA Rihito , AKAGAWA Naoya , SUWA Tomoyuki , TERAMOTO Akinobu , LI Xiang , OBARA Toshiki , KIMOTO Daiki , SUGAWA Shigetoshi , OHMI Tadahiro , KUMAGAI Yuki , KAMATA Yutaka , SHIBUSAWA Katsuhiko

    Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process employing sallow trench isolation (STI) with 0.22 pm technology. To preserve atomica …

    Technical report of IEICE. SDM 114(255), 7-12, 2014-10-16

  • Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region  [in Japanese]

    YONEZAWA Akihiro , TERAMOTO Akinobu , OBARA Toshiki , KURODA Rihito , SUGAWA Shigetoshi , OHMI Tadahiro

    We extracted time constants of capture and emission of Random Telegraph Noise (RTN), and their dependencies of the gate-source voltage from numerous MOSFETs and discuss the trapping and detrapping pro …

    Technical report of IEICE. SDM 113(247), 51-56, 2013-10-17

  • A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface  [in Japanese]

    Kuroda Rihito , Nakao Yukihisa , Teramoto Akinobu , Sugawa Shietoshi , Ohmi Tadahiro

    In this work, carrier mobility characteristics of (100), (110), and (551) oriented atomically flattened Si surfaces are reported, and they are utilized to the proposed mobility-based assessment method …

    Technical report of IEICE. SDM 113(247), 15-20, 2013-10-17

  • Ultra high speed wet etching technology for a silicon wafer process  [in Japanese]

    SAKAI Takeshi , YOSHIDA Tatsuro , YOSHIKAWA Kazuhiro , OHMI Tadahiro

    The silicon wafer thinning technology is important in three-dimensional integrated technology. In this paper, we consider the silicon wafer thinning technology by Wet Etching. And, we propose new proc …

    Technical report of IEICE. SDM 112(263), 41-45, 2012-10-18

    References (19)

  • Science-Based New Silicon LSI Technologies : Improvement of Silicon LSI Instead of Current Device Miniaturization  [in Japanese]

    OHMI Tadahiro , NAKAO Yukihisa , KURODA Rihito , SUWA Tomoyuki , TANAKA Hiroaki , SUGAWA Shigetoshi

    Proposal of device performance improvement of Si LSI facing with complete limitations. By establishing new manufacturing technologies to fabricate LSI on any crystal orientation Si surface, we must de …

    Technical report of IEICE. SDM 112(263), 27-32, 2012-10-18

    References (10)

  • Low Temperature PECVD of High Quality Silicon Nitride for Gate Spacer  [in Japanese]

    NAKAO Yukihisa , TERAMOTO Akinobu , KURODA Rihito , SUWA Tomoyuki , TANAKA Hiroaki , SUGAWA Shigetoshi , OHMI Tadahiro

    In order to improve the performance of metal oxide semiconductor field effect transistors (MOSFETs), chemically and thermally unstable new materials have been studied and introduced. Thin insulator fi …

    Technical report of IEICE. SDM 112(263), 21-26, 2012-10-18

    References (11)

  • Evaluation of crystalline phase in SiO_2 thin film using Grazing incidence X-ray diffraction  [in Japanese]

    NAGATA Kohki , YAMAGUCHI Takuya , OGURA Atsushi , KOGANEZAWA Tomoyuki , HIROSAWA Ichiro , SUWA Tomoyuki , TERAMOTO Akinobu , HATTORI Takeo , OHMI Tadahiro

    Crystalline like structures in SiO_2 thin films formed using oxygen molecules/radicals were investigated by X-ray reflectometry (XRR) and grazing incident X-ray diffraction (GIXD) measurements. The st …

    Technical report of IEICE. SDM 112(263), 11-14, 2012-10-18

    References (14)

  • Chemical structures of compositional transition layer at SiO_2/Si(100)interface  [in Japanese]

    SUWA Tomoyuki , TERAMOTO Akinobu , MURO Takayuki , KINOSHITA Toyohiko , SUGAWA Shigetoshi , HATTORI Takeo , OHMI Tadahiro

    The angle-resolved Si 2p photoelectron spectra arising form the transition layers formed on the SiO_2/Si(100) interface covered with more than one SiO_2 monolayer, which is device grade, were measured …

    Technical report of IEICE. SDM 112(263), 1-4, 2012-10-18

    References (9)

  • Silicon Wafer Wet Etching for Plug Protrusion of 3D chip-stacking technology with Through Silicon Via  [in Japanese]

    YOSHIKAWA Kazuhiro , YOSHIDA Tatsuro , SOEDA Kazuki , HIRATSUKA Ryosuke , OHMI Tadahiro

    A three-dimensional integrated circuit is developed as an emerging technology in a semiconductor industry. The plug protrusion technology is one of key technology for a three-dimensional integrated ci …

    Technical report of IEICE. SDM 111(249), 97-100, 2011-10-13

    References (7)

  • Performance Evaluation of 3D FPGA using Through Silicon Via  [in Japanese]

    MIYAMOTO Naoto , MATSUMOTO Yohei , KOIKE Hanpei , MATSUMURA Tadayuki , OSADA Kenichi , NAKAGAWA Yaoko , OHMI Tadahiro

    3D LSI fabrication is a promising technology as a representative of "More Than Moore" stream. 3D FPGA is one of the killer applications of the 3D LSI platform because FPGA requires a lot of wire segme …

    Technical report of IEICE. SDM 111(249), 91-96, 2011-10-13

    References (4)

  • High Purity Metal Organic Gas Distribution System  [in Japanese]

    YAMASHITA Satoru , ISHII Hidekazu , SHIBA Yoshinobu , KITANO Masafumi , SHIRAI Yasuyuki , SUGAWA Shigetoshi , OHMI Tadahiro

    The gas flow control is important factor that influenced to the concentration of process gas and the pressure of process chamber. In composite semiconductor manufacturing process that using metal orga …

    Technical report of IEICE. SDM 111(249), 85-90, 2011-10-13

    References (4)

  • Clear Difference between the Chemical Structure of SiO_2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules  [in Japanese]

    SUWA Tomoyuki , KUMAGAI Yuki , TERAMOTO Akinobu , KINOSHITA Toyohiko , MURO Takayuki , HATTORI Takeo , OHMI Tadahiro

    Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radicals (OR) and oxygen molecules (OM) are reported. For SiO_2 films formed using OR, …

    Technical report of IEICE. SDM 111(249), 49-52, 2011-10-13

    References (13)

  • Science Based New Silicon Technologies  [in Japanese]

    OHMI Tadahiro

    Current Silicon Technologies can fabricate LSI only on (100) Silicon surface using two dimensional planar structure MOS transistors, because relatively high integrity SiO_2 films can be formed only on …

    Technical report of IEICE. SDM 111(249), 27-36, 2011-10-13

    References (11)

  • On the relation between interface flattening effect and insulator breakdown characteristic of radical reaction based insulator formation technology  [in Japanese]

    KURODA Rihito , TERAMOTO Akinobu , LI Xiang , SUWA Tomoyuki , SUGAWA Shigetoshi , OHMI Tadahiro

    Gate insulator films formed by radical reaction based insulator formation technology are known to exhibit lower leakage current across ultrathin gate insulator films and lower 1/f noise compared to th …

    Technical report of IEICE. SDM 111(249), 21-26, 2011-10-13

    References (15)

  • Statistical Evaluations of Generation and Recovery Characteristics of Anomalous Stress Induced Leakage Current  [in Japanese]

    INATSUKA Takuya , KUMAGAI Yuki , KURODA Rihito , TERAMOTO Akinobu , SUGAWA Shigetoshi , OHMI Tadahiro

    We have statistically evaluated anomalous stress induced leakage current (SILC) which is generated by electric stress applied to gate oxide. Anomalous SILC indicates much larger current density than a …

    Technical report of IEICE. SDM 111(249), 11-16, 2011-10-13

    References (15)

  • Reduction of Random Telegraph Noise with Broad Channel MOSFET  [in Japanese]

    SUZUKI Hiroyoshi , KURODA Rihito , TERAMOTO Akinobu , YONEZAWA Akihiro , MATSUOKA Hiroaki , NAKAZAWA Taiki , ABE Kenichi , SUGAWA Shigetoshi , OHMI Tadahiro

    Drastic reduction of random telegraph noise (RTN) is demonstrated due to the broad channel MOSFET structure. We found that suppressing the channel percolation and the reducing the trap's coulomb block …

    Technical report of IEICE. SDM 111(249), 5-9, 2011-10-13

    References (13)

  • Low Series Resistance CMOS Source/Drain Electrode Formation Technology using Dual Silicide  [in Japanese]

    KURODA Rihito , NAKAO Yukihisa , SUGAWA Shigetoshi , TANAKA Hiroaki , TERAMOTO Akinobu , MIYAMOTO Naoto , OHMI Tadahiro

    電気学会研究会資料. EDD, 電子デバイス研究会 2011(35), 5-10, 2011-03-01

    References (26)

  • Statistical Evaluation of Random Telegraph Signal in MOSFET  [in Japanese]

    TERAMOTO Akinobu , ABE Kenichi , SUGAWA Shigetoshi , OHMI Tadahiro

    Important parameters of Random Telegraph Signal (RTS) in MOSFET, such as amplitude, time constant vary very much. For evaluating exact characteristics of these parameters, a statistical measurement ba …

    IEICE technical report 110(274), 17-22, 2010-11-04

    References (18)

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