末次 正 SUETSUGU Tadashi

ID:1000060279255

福岡大学工学部電子情報工学科 Department of Electronics and Computer Science, Fukuoka University (2016年 CiNii収録論文より)

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Articles:  1-20 of 52

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  • BS-5-4 Current Dividing Inverse Class E Amplifier for GaN Device  [in Japanese]

    Suetsugu Tadashi

    Proceedings of the IEICE General Conference 2016年_通信(2), "S-110"-"S-111", 2016-03-01

  • Fast Response Class E Amplifier with EPWM-EER Architecture  [in Japanese]

    SUETSUGU Tadashi , OYAMA Naoki , KUGA Shotaro , WEI Xiuqin

    The EER transmission system was introduced to exploit high efficiency switching power amplifiers in the high PAPR transmission systems such as QAM and OFDM. However, due to transient attenuation chara …

    Technical report of IEICE. Energy engineering in electronics and communications 114(240), 7-12, 2014-10-10

  • MOSFET Nonlinear Capacitance Effect on EER Transmitter with Class-E Amplifier  [in Japanese]

    WEI Xiuqin , NAGASHIMA Tomoharu , SEKIYA Hiroo , SUETSUGU Tadashi

    This paper presents analytical expressions of the MOSFET-parasitic-capacitance effects on the output envelope of the EER transmitter, taking into account the MOSFET linear gate-to-drain and nonlinear …

    IEICE technical report. Nonlinear problems 114(55), 63-67, 2014-05-26

  • Maximum Operating Frequency of Class E Amplifier at Any Duty Ratio  [in Japanese]

    SUETSUGU Tadashi

    This paper shows that the maximum operating frequency of the class E power amplifier depends on the transistor duty ratio. The maximum operating frequency increases as the duty ratio decreases under z …

    Technical report of IEICE. Energy engineering in electronics and communications 113(239), 1-4, 2013-10-10

  • Design of Class-E Inverter with Inductive Impedance Inverter for Achieving Zero Voltage Switching at Any Load Resistance  [in Japanese]

    NAGASHIMA Tomoharu , WEI Xiuqin , SUETSUGU Tadashi , SEKIYA Hiroo

    This paper presents a design of the class-E inverter with an inductive impedance inverter for achieving zero voltage switching (ZVS) at any load resistance. There is a region of load-resistance values …

    IEICE technical report. Nonlinear problems 113(69), 71-75, 2013-05-27

  • Fundamental Study on Drain Efficiency of EPWM Transmitter using Class-E_M Power Amplifier  [in Japanese]

    OYAMA Naoki , SEKIYA Hiroo , SUETSUGU Tadashi , TAROMARU Makoto

    Drain efficiency of EPWM (envelope pulse width modulation) transmitter composed of a class-E_M amplifier is evaluated by circuit simulation, and the pulse modulation method to the constant envelope RF …

    IEICE technical report 111(145), 157-162, 2011-07-14

    References (17)

  • Challenge of interdisciplinary and integrated education for manufacturing  [in Japanese]

    Mishima Kenji , Matsuyama Kiyoshi , Kato Takafumi , Suetsugu Tadashi , Aramaki Shigeto , Abiru Masahiro

    Fukuoka University review of technological sciences (84), 53-60, 2010-03

    IR 

  • Measurement of cerebral blood oxygenation during a verbal fluency task by means of fNIRS  [in Japanese]

    Mishima Kenji , Matsuyama Kiyoshi , Kato Takafumi , Suetsugu Tadashi , Aramaki Shigeto , Irie Keiichi , Akitake Yoshiharu , Mishima Kenichi , Fujiwara Michihiro , Ai Hiroyuki , Abiru Masahiro

    Fukuoka University review of technological sciences (84), 49-52, 2010-03

    IR  Cited by (1)

  • Derivation of Analytical Equation of Maximum Operating Frequency of Class E Amplifier With Nonlinear Shunt Capacitance  [in Japanese]

    NAKAJIMA Keisuke , ITO Akira , SUETSUGU Tadashi

    The maximum operating frequency of the class E amplifier with nonlinear shunt capacitance depends on the transistor duty ratio. It varies with the duty ratio under zero-voltage switching (ZVS) and zer …

    IEICE technical report 109(371), 41-45, 2010-01-14

    References (9)

  • Simulation of Power Dissipation at MOSFET Gate Port of Class E Amplifier  [in Japanese]

    YONEKURA Shouichirou , MATSUZAKI Taisi , SUETSUGU Tadashi

    In this paper, gate port power dissipation of class E amplifier is obtained as a function of amplitude and offset of drive signal with Pspice simulation. The gate power dissipation of MOSFET in class …

    IEICE technical report 109(371), 37-40, 2010-01-14

    References (3)

  • Transient Behavior of Class E Amplifier due to Load Variation  [in Japanese]

    YASUKOUCHI Takeshi , SUETSUGU Tadashi

    Class E amplifier is often broken when it is operating with a fluctuating load. This is because excessive voltage or current is imposed to the transistor of the class E amplifier. However, transient b …

    IEICE technical report 108(402), 13-17, 2009-01-16

    References (2)

  • Transient Behavior of Class E Amplifier due to Load Variation  [in Japanese]

    YASUKOUCHI Takeshi , SUETSUGU Tadashi

    Class E amplifier is often broken when it is operating with a fluctuating load. This is because excessive voltage or current is imposed to the transistor of the class E amplifier. However, transient b …

    IEICE technical report 108(403), 13-17, 2009-01-16

    References (2)

  • A-1-14 Analysis of Maximum Operating Frequency of Class E Amplifier  [in Japanese]

    Yasukouchi Takeshi , Suetsugu Tadashi

    Proceedings of the Society Conference of IEICE 2008年_基礎・境界, 14, 2008-09-02

  • A-4-1 FPGA Based Design of PC User Monitoring System  [in Japanese]

    Hashimoto Koji , Moshnyaga Vasily G. , Suetsugu Tadashi

    Proceedings of the IEICE General Conference 2008年_基礎・境界, 91, 2008-03-05

  • Simulation Study of Peak Switch Voltage of Phase-Shift Controlled Class E Amplifier  [in Japanese]

    HAYASHI Mitsuaki , YASUKOUCHI Takeshi , SUETSUGU Tadashi

    In this paper, peak switch voltages of phase-shift controlled class E amplifier are analyzed with Pspice simulation of various circuit conditions of phase-shift controlled class E amplifier.

    IEICE technical report 107(430), 113-117, 2008-01-14

    References (5)

  • Analysis of Maximum Output Power of Class E Amplifier  [in Japanese]

    YAUKOUCHI Takeshi , SUETSUGU Tadashi

    This paper analyzes maximum output power of class E amplifier with arbitrary transistor. It is important to estimate maximum output power of class E amplifier when a specification of transistor is giv …

    IEICE technical report 107(430), 107-111, 2008-01-14

    References (2)

  • Effect of Nonlinear Output Capacitance in Class DE Amplifier  [in Japanese]

    SEKIYA Hiroo , WATANABE Takayuki , SUETSUGU Tadashi , YAHAGI Takashi

    In this paper, equations for the waveform and the design relationships are derived for the class DE amplifier with nonlinear output capacitances. From the analytical waveform equations, it is shown th …

    IEICE technical report 107(330), 51-56, 2007-11-12

    References (8)

  • Steady-State Behavior of Class E Amplifier  [in Japanese]

    SUETSUGU Tadashi , KAZIMIERCZUK Marian

    Explicit expressions for steady-state behavior of the class E amplifier are derived. These equations are useful to predict the behavior of the class E amplifier outside the designed conditions. It is …

    IEICE technical report 107(330), 45-50, 2007-11-12

    References (5) Cited by (2)

  • Design of Class DE Amplifire with Nonliear Capacitance  [in Japanese]

    WATANABE Takayuki , SEKIYA Hiroo , SUETSUGU Tadashi , YAHAGI Takashi

    A Class DE amplifier is the amplifier which can achieve high efficiency movement under number of the high frequencies movement, and application to various fields is expected. In a conventional study, …

    IEICE technical report 106(451), 51-56, 2007-01-10

    References (16) Cited by (3)

  • Analysis of Class DE Amplifire with Nonliear Capacitance  [in Japanese]

    SEKIYA Hiroo , WATANABE Takayuki , SUETSUGU Tadashi , YAHAGI Takashi

    Class DE amplifier can be achieved high power conversion efficiency under high frequency operation. It is expected class DE amplifier is applicable to many fields. The key technology of class DE ampli …

    IEICE technical report 106(414), 39-44, 2006-12-07

    References (15) Cited by (3)

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