Goto Tsuneaki GOTO Tsuneaki

ID:9000003271946

Department of Applied Physics, Tokyo Institute of Technology:(Present address) The Research Institute for Iron, Steel and Other Metals, Tohoku University (1972年 CiNii収録論文より)

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Articles:  1-3 of 3

  • Impurity conduction in Ti-doped VO2 studied by microwave frequency conductivity

    KABASHIMA Shigeharu , GOTO Tsuneaki , NISHIMURA Katsuyuki , KAWAKUBO Tatsuyuki

    The dc and 24 GHz conductivities of VO_2 containing various amounts of Ti have been measured below the semiconductor-to-metal transition point. Above 290 K the activation energy for dc conductivity is …

    Journal of the Physical Society of Japan 32(1), 158-163, 1972-01

  • Relaxation process in electron spin resonance of Ti-doped VO2

    GOTO Tsuneaki , NIHSIMURA Katsuyuki , KABASHIMA Shigeharu , KAWAKUBO Tatsuyuki

    In order to investigate the spin relaxation mechanism in Ti-doped VO_2 in relation to the itineracy of electrons associated with Ti impurities substituted for V^<4+>, the linewidth and line inte …

    Journal of the Physical Society of Japan 30(6), 1654-1661, 1971-06

  • Electron spin resonance in Ti-doped VO2

    GOTO Tsuneaki , NISHIMURA Katsuyuki , KABASHIMA Shigeharu , KAWAKUBO Tatsuyuki

    The behavior of carriers trapped around doped Ti ions in VO_2 is investigated by means of the electorn spin resonance in a temperature range between liquid nitrogen and room temperature. The line shap …

    Journal of the Physical Society of Japan 28(4), 993-996, 1970-04

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