坂本 恵司 SAKAMOTO Keiji

ID:9000004339055

日亜化学工業(株)第二部門窒化物半導体研究所 Nitride Semiconductor Research Laboratory, NICHIA Corporation (2002年 CiNii収録論文より)

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  • GaN based near ultraviolet light emitting devices  [in Japanese]

    NAGAHAMA Shin-ichi , SANO Masahiko , YANAMOTO Tomoya , MORITA Daisuke , MASTUMURA Hiroaki , YAMAMOTO Masashi , MIKI Osamu , SAKAMOTO Keiji , MUKAI Takashi

    We fabricated the GaN-based laser diodes (LDs) and evaluated these characteristics. Regarding the 400nm-LDs for digital versatile disks, we reported the new structure of LDS that was optimized for the …

    Journal of the Japanese Association for Crystal Growth 29(2), 138, 2002

    J-STAGE  References (1)

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