藤本 康弘 FUJIMOTO Yasuhiro

ID:9000004745459

松下電器産業(株)半導体社 半導体デバイス研究センター Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co. Ltd. (2003年 CiNii収録論文より)

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Articles:  1-4 of 4

  • Fabrication of GaN-based Surface Emitting Devices Using Laser Lift-Off Technique  [in Japanese]

    Tamura Satoshi , Fujimoto Yasuhiro , Ogawa Masahiro , Ishida Masahiro , Ueda Tetsuzo , Yuri Masaaki

    We have developed so-called laser lift-off (LLO) technique, by which a GaN epilayer is separated from the sapphire substrate. A 2-inch GaN epilayer has been successfully removed from the sapphire subs …

    IEICE technical report. Component parts and materials 103(343), 49-53, 2003-10-02

  • Fabrication of GaN-based Surface Emitting Devices Using Laser Lift-Off Technique  [in Japanese]

    TAMURA Satoshi , FUJIMOTO Yasuhiro , OGAWA Masahiro , ISHIDA Masahiro , UEDA Tetsuzo , YURI Masaaki

    We have developed so-called laser lift-off (LLO) technique, by which a GaN epilayer is separated from the sapphire substrate. A 2-inch GaN epi layer has been successfully removed from the sapphire sub …

    Technical report of IEICE. LQE 103(345), 49-53, 2003-09-25

    References (13)

  • Fabrication of GaN-based Surface Emitting Devices Using Laser Lift-Off Technique  [in Japanese]

    OJIMA Iwao , FUJIMOTO Yasuhiro , OGAWA Masahiro , ISHIDA Masahiro , UEDA Tetsuzo , YURI Masaaki

    We have developed so-called laser lift-off (LLO) technique, by which a GaN epilayer is separated from the sapphire substrate. A 2-inch GaN epilayer has been successfully removed from the sapphire subs …

    IEICE technical report. Electron devices 103(341), 49-53, 2003-09-25

    References (19)

  • Fabrication of GaN-based Surface Emitting Devices Using Laser Lift-Off Technique  [in Japanese]

    TAMURA Satoshi , FUJIMOTO Yasuhiro , OGAWA Masahiro , ISHIDA Masahiro , UEDA Tetsuzo , YURI Masaaki

    電子情報通信学会技術研究報告. CPM, 電子部品・材料 103(343), 49-53, 2003-09-25

    References (13)

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