末永 淳 SUENAGA Jun

ID:9000004780055

ソニー(株) コアテクノロジー&ネットワークカンパニー, SC, プロセス開発部 Process Development Dept., SC., Core Technol. & Network Company, Sony Corporation (1999年 CiNii収録論文より)

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Articles:  1-4 of 4

  • Uniform and Thermally Stable Co Salicide Formation for Sub-Quarter-micron Dual-Gate CMOS Devices

    SUMI Hirofumi , SUENAGA Jun , OKAMOTO Yutaka

    The salicide module process was improved in order to obtain low uniform sheet resistance in narrow regions of a gate area with high concentration of N^+ or P^+ -type dopant. For dual-gate CMOS applica …

    Technical report of IEICE. ICD 99(233), 105-110, 1999-07-22

    References (4)

  • Uniform and Thermally Stable Co Salicide Formation for Sub-Quarter-micron Dual-Gate CMOS Devices

    SUMI Hirofumi , SUENAGA Jun , OKAMOTO Yutaka

    The salicide module process was improved in order to obtain low uniform sheet resistance in narrow regions of a gate area with high concentration of N^+ or P^+ -type dopant. For dual-gate CMOS applica …

    Technical report of IEICE. SDM 99(231), 105-110, 1999-07-22

    References (4)

  • Uniform and Thermally Stable Co Salicide Formation for Sub-Quarter-micron Dual-Gate CMOS Devices  [in Japanese]

    SUMI Hirofumi , SUENAGA Jun , OKAMOTO Yutaka

    The salicide module process was improved in order to obtain low uniform sheet resistance in narrow regions of a gate area with high concentration of N^+ or P^+ -type dopant. For dual-gate CMOS applica …

    IEICE technical report. Electron devices 99(229), 105-110, 1999-07-22

    References (4)

  • Comparative Evaluation of Ti Salicide and Co Salicide Processes for Sub-quarter-micron CMOS Devices  [in Japanese]

    SUMI Hirofumi , TAJIMA Kazuhiro , SUENAGA Jun , HARIFUCHI Hideo , OKAMOTO Yutaka

    最適化されたTiサリサイドとCoサリサイドプロセスの比較評価を行った.プリアモルファス化プロセス若しくはインタミキシングプロセスでTiサリサイドを形成すると細線効果を抑制できるが, インタミキシングプロセスで形成したトランジスタのしきい値電圧は不安定になるので, プリアモルファス化プロセスの方が優れている.一方, Coサリサイドプロセスはプリアモルファス化プロセスを用いなくても細線効果は生じない. …

    The Transactions of the Institute of Electronics,Information and Communication Engineers. C-(0xF9C2) 00081(00003), 307-312, 1998-03

    References (6)

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