YOSHIDA Nobuhide

ID:9000004818413

NEC Corporation (2000年 CiNii収録論文より)

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  • Low-Voltage, Low-Power, High-Speed 0.25-μm GaAs HEMT Delay Flip-Flops

    ENOMOTO Tadayoshi , HIROBE Atsunori , FUJII Masahiro , YOSHIDA Nobuhide , ASAI Shuji

    Four different types of GaAs HEMT DCFL static delay latches based on NOR gates were developed. Eight different types of low-voltage, low-power, high-speed delay flip-flops (D-FFs) were constructed usi …

    IEICE Trans. Electron 83(11), 1776-1787, 2000-11-25

    References (9) Cited by (4)

  • ECL-Compatible Low-Power-Consumption 10-Gb/s GaAs 8:1 Multiplexer and 1:8 Demultiplexer

    YOSHIDA Nobuhide , FUJII Masahiro , ATSUMO Takao , NUMATA Keiichi , ASAI Shuji , KOHNO Michihisa , OIKAWA Hirokazu , TSUTSUI Hiroaki , MAEDA Tadashi

    An emitter coupled logic (ECL) compatible low-power GaAs 8 : 1 multiplexer (MUX) and 1 : 8 demultiplexer (DEMUX) for 10-Gb/s optical communication systems has been developed. In order to decrease the …

    IEICE Trans. Electron. 82(11), 1992-1999, 1999-11-25

    References (16) Cited by (1)

  • 0.21-fJ GaAs DCFL Circuits Using 0.2-μm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs

    WADA Shigeki , TOKUSHIMA Masatoshi , ISHIKAWA Masaoki , YOSHIDA Nobuhide , FUJII Masahiro , MAEDA Tadashi

    Ultra-low-power-consumption and high-speed DCFL circuits have been fabricated by using 0.2-μm Y-shaped gate E/D-heterojunction-FETs (HJFETs) with a high-aspect-ratio gate-structure, which has an advan …

    IEICE transactions on electronics 82(3), 491-497, 1999-03-25

    References (11)

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