遠藤 章宏 ENDO Akihiro

ID:9000004966807

沖電気工業株式会社 超LSI研究開発センタ VLSI R&D center, Oki electric industry Co., Ltd. (1995年 CiNii収録論文より)

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  • Dry development for GbDRAM  [in Japanese]

    KIMURA Yasuki , ENDO Hiroyuki , ENDO Akihiro

    Gas composition where isotropic etching component and isotropic deposition component cancel each other, was obtained by adding ethanol gas to oxygen based chemistry. At the gas composition, resist pro …

    Technical report of IEICE. SDM 95(317), 1-8, 1995-10-20

    References (7)

  • O_2RIE using ethanol gas mixture  [in Japanese]

    Kimura Yasuki , Endo Hiroyuki , Shimizu Yoshiyuki , Endo Akihiro

    By adding ethanol gas to oxygen-based chemistry,the controllability of resist profile under the condition with nearly no areas of material to be etched (etchable area),are improved.A model for resist …

    Technical report of IEICE. SDM 94(282), 51-57, 1994-10-19

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