岡田 和彦 OKADA Kazuhiro

ID:9000004970848

岡山県立大学情報工学部 Faculty of Computer Science and System Engineering, Okayama Prefectural University (2005年 CiNii収録論文より)

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Articles:  1-2 of 2

  • A Test Structure to Analyze (Highly-Doped/Lightly-Doped)-Drain in LDD-Type CMOSFET  [in Japanese]

    OHZONE Takashi , MATSUDA Toshihiro , OKADA Kazuhiro , MORISHITA Takayuki , KOMOKU Kiyotaka , IWATA Hideyuki

    A test structure to separately measure sheet resistances of highly-doped-drain (HDD) and lightly- doped-drain (LDD) in LDD-type CMOSFETs with various gate spaces S having sub-100nm sidewalls was propo …

    Technical report of IEICE. ICD 105(234), 55-60, 2005-08-11

    References (9)

  • A Test Structure to Analyze (Highly-Doped/Lightly-Doped)-Drain in LDD-Type CMOSFET  [in Japanese]

    OHZONE Takashi , MATSUDA Toshihiro , OKADA Kazuhiro , MORISHITA Takayuki , KOMOKU Kiyotaka , IWATA Hideyuki

    A test structure to separately measure sheet resistances of highly-doped-drain (HDD) and lightly-doped-drain (LDD) in LDD-type CMOSFETs with various gate spaces S having sub-100nm sidewalls was propos …

    Technical report of IEICE. SDM 105(232), 55-60, 2005-08-11

    References (9)

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