澤田 勝

ID:9000006209947

工学院大学工学部電子工学科 Department of Electronic Engineering, Kogakuin University (2006年 CiNii収録論文より)

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Articles:  1-4 of 4

  • GaN films deposited by CS-MBD with pulsed source feeding  [in Japanese]

    ARAI Masatoshi , SUGIMOTO Koichi , EGAWA Shinichi , BABA Taichi , 澤田 , HONDA Tohru

    GaN films were deposited at low temperature by compound-source molecular beam deposition (CS-MBD) with pulsed-source feeding. As the interval time of the pulsed-source feeding during the GaN depositio …

    IEICE technical report 106(271), 93-96, 2006-10-05

  • GaN films deposited by CS-MBD with pulsed source feeding  [in Japanese]

    ARAI Masatoshi , SUGIMOTO Koichi , EGAWA Shinichi , BABA Taichi , 澤田 , HONDA Tohru

    GaN films were deposited at low temperature by compound-source molecular beam deposition (CS-MBD) with pulsed-source feeding. As the interval time of the pulsed-source feeding during the GaN depositio …

    IEICE technical report 106(269), 93-96, 2006-09-28

    References (11)

  • GaN films deposited by CS-MBD with pulsed source feeding  [in Japanese]

    ARAI Masatoshi , SUGIMOTO Koichi , EGAWA Shinichi , BABA Taichi , 澤田 , HONDA Tohru

    GaN films were deposited at low temperature by compound-source molecular beam deposition (CS-MBD) with pulsed-source feeding. As the interval time of the pulsed-source feeding during the GaN depositio …

    IEICE technical report 106(270), 93-96, 2006-09-28

    References (11)

  • GaN films deposited by CS-MBD with pulsed source feeding  [in Japanese]

    ARAI Masatoshi , SUGIMOTO Koichi , EGAWA Shinichi , BABA Taichi , 澤田 , HONDA Tohru

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス 106(271), 93-96, 2006-09-28

    References (11)

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