吉田 春彦 YOSHIDA Haruhiko

ID:9000006904957

(株)東芝研究開発センター Corporate R&D Center, Toshiba Corporation (2010年 CiNii収録論文より)

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Articles:  1-11 of 11

  • Development of integration technology of silicon MZI modulator and InGaAs MSM-PD for on-chip optical interconnects  [in Japanese]

    OHIRA Kazuya , KOBAYASHI Kentaro , IIZUKA Norio , YOSHIDA Haruhiko , SUZUKI Takashi , SUZUKI Nobuo , EZAKI Mizunori

    The development of integration technology of silicon MZI modulator and InGaAs MSM-PD for on-chip optical interconnects are reported. We demonstrated a silicon Mach-Zehnder interferometer (MZI) optical …

    IEICE technical report 110(352), 1-6, 2010-12-10

    References (25)

  • C-3-46 Photonic-wire waveguide integrated device  [in Japanese]

    Yoshida Haruhiko , Ohira Kazuya , Kobayashi Kentaro , Iizuka Norio , Ezaki Mizunori

    Proceedings of the IEICE General Conference 2010年_エレクトロニクス(1), 219, 2010-03-02

  • Development of on-chip optical interconnection devices integrated with Si waveguides  [in Japanese]

    KOBAYASHI Kentaro , OHIRA Kazuya , IIZUKA Norio , YOSHIDA Haruhiko , EZAKI Mizunori

    We report on the development of on-chip silicon photonic components for the realization of LSI optical interconnection. This paper presents on-chip integration of laser diodes (LDs), Si waveguides and …

    IEICE technical report 109(353), 53-56, 2009-12-11

    References (8)

  • Si-wire waveguide integrated device  [in Japanese]

    YOSHIDA Haruhiko , OHIRA Kazuya , SATO Taisuke , HASHIMOTO Rei , IIZUKA Norio , SUZUKI Nobuo , EZAKI Mizunori

    電気学会研究会資料. EMT, 電磁界理論研究会 2009(1), 21-26, 2009-01-29

    References (12)

  • Si-wire waveguide integrated device  [in Japanese]

    YOSHIDA Haruhiko , OHIRA Kazuya , SATO Taisuke , HASHIMOTO Rei , IIZUKA Norio , SUZUKI Nobuo , EZAKI Mizunori

    Silicon photonics on an SOI wafer or chip, which enables miniaturized optical interconnection down to submicron scale utilizing silicon-wire waveguide, has been attracting much attention as a promisin …

    IEICE technical report 108(417), 21-26, 2009-01-22

    References (12)

  • Si-wire waveguide integrated device  [in Japanese]

    YOSHIDA Haruhiko , OHIRA Kazuya , SATO Taisuke , HASHIMOTO Rei , IIZUKA Norio , SUZUKI Nobuo , EZAKI Mizunori

    Silicon photonics on an SOI wafer or chip, which enables miniaturized optical interconnection down to submicron scale utilizing silicon-wire waveguide, has been attracting much attention as a promisin …

    IEICE technical report 108(418), 21-26, 2009-01-22

    References (12)

  • Si-wire waveguide integrated device  [in Japanese]

    YOSHIDA Haruhiko , OHIRA Kazuya , SATO Taisuke , HASHIMOTO Rei , IIZUKA Norio , SUZUKI Nobuo , EZAKI Mizunori

    Silicon photonics on an SOI wafer or chip, which enables miniaturized optical interconnection down to submicron scale utilizing silicon-wire waveguide, has been attracting much attention as a promisin …

    IEICE technical report 108(419), 21-26, 2009-01-22

    References (12)

  • Intersubband absorption in GaN/AlN-based waveguide with SiN cladding layer  [in Japanese]

    飯塚 紀夫 , 清水 俊匡 , 吉田 春彦 [他]

    IEICE technical report 108(261), 113-116, 2008-10-23

  • Intersubband absorption in GaN/AlN-based waveguide with SiN cladding layer  [in Japanese]

    IIZUKA Norio , SHIMIZU Toshimasa , YOSHIDA Haruhiko , MANAGAKI Nobuto , HASSANET Sodabanlu , SUGIYAMA Masakazu , NAKANO Yoshiaki

    Intersubband absorption was achieved for a waveguide with SiN as a upper cladding layer. With the purpose of applying to ultrafast optical switches, the waveguide consisted of an AlN lower cladding la …

    IEICE technical report 108(260), 113-116, 2008-10-16

    References (8)

  • Intersubband absorption in GaN/AlN-based waveguide with SiN cladding layer  [in Japanese]

    IIZUKA Norio , SHIMIZU Toshimasa , YOSHIDA Haruhiko , MANAGAKI Nobuto , HASSANET Sodabanlu , SUGIYAMA Masakazu , NAKANO Yoshiaki

    Intersubband absorption was achieved for a waveguide with SiN as a upper cladding layer. With the purpose of applying to ultrafast optical switches, the waveguide consisted of an AlN lower cladding la …

    IEICE technical report 108(259), 113-116, 2008-10-16

    References (8)

  • Intersubband absorption in GaN/AlN-based waveguide with SiN cladding layer  [in Japanese]

    IIZUKA Norio , SHIMIZU Toshimasa , YOSHIDA Haruhiko , MANAGAKI Nobuto , HASSANET Sodabanlu , SUGIYAMA Masakazu , NAKANO Yoshiaki

    Intersubband absorption was achieved for a waveguide with SiN as a upper cladding layer. With the purpose of applying to ultrafast optical switches, the waveguide consisted of an AlN lower cladding la …

    Technical report of IEICE. LQE 108(261), 113-116, 2008-10-16

    References (8)

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