大山 泰 OHYAMA Yasushi

ID:9000020310161

富士通 (株) 川崎工場 Fujitsu Ltd. (1983年 CiNii収録論文より)

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  • Evaluation of W-Si Films Formed by Plasma CVD  [in Japanese]

    OHYAMA Yasushi , SHIOYA Yoshimi , MAEDA Mamoru , TAKAGI Mikio

    Refractory metals and their silicides are the major candidates for low resistivity interconnect material for replacing polysilicon. Their films are commonly deposited by co-sputtering or evaporation m …

    Shinku 26(11), 831-836, 1983

    J-STAGE 

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