Tsukimoto Susumu

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  • Effects of TiN Buffer Layer Thickness on GaN Growth

    Ito Kazuhiro , Uchida Yu , Lee Sangjin , Tsukimoto Susumu , Ikemoto Yuhei , Hirata Koji , Murakami Masanori

    Smooth GaN layers were successfully grown on metallic TiN buffer layers by metalorganic chemical vapor deposition (MOCVD). One important factor in controlling GaN layer smoothness was the TiN layer th …

    Journal of Electronic Materials 38(4), 511-517, 2009-04

    IR 

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