Inoue Hajime INOUE Hajime

ID:9000045708195

MOS Process Department, Semiconductor Company, Sony Corp. (1997年 CiNii収録論文より)

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  • Characteristics of TiN Films Sputtered under Optimized Conditions of Metallic Mode Deposition

    SUMI Hirofumi , INOUE Hajime , TAGUCHI Mitsuru , SUGANO Yukiyasu , MASUYA Haruko , ITO Naohiko , KISHIDA Satoru , TOKUTAKA Heizo

    We prepared TiN films by metallic or nitride mode sputtering using a collimator, and investigated the characteristics of the films. Resistivity, density, thermal stress, X-ray photoelectron spectrosco …

    Japanese Journal of Applied Physics 36(2), 595-600, 1997-02

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