GOTO Shigeo


Optoelectronics Technology Research Laboratory (1995年 CiNii収録論文より)

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  • Etching of Al_xGa_<1-x>As(0≦x≦1) by Trisdimethylaminoarsine

    GOTO Shigeo , NOMURA Yasuhiko , MORISHITA Yoshitaka

    The etching of Al<SUB> x</SUB>Ga<SUB>1- x</SUB>As by trisdimethylaminoarsine (TDMAAs) in an ultra-high-vacuum chamber of molecular-beam epitaxy (MBE) was investigated in relati …

    Japanese Journal of Applied Physics 34(5), L533-L535, 1995-05-01

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