KOSHIDA Nobuyoshi


Faculty of Technology, Tokyo University of Agriculture and Technology (1996年 CiNii収録論文より)

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  • Effects of Oxidation on Electronic States and Photoluminescence Properties of Porous Si

    KOIZUMI Tomohiro , OBATA Koji , TEZUKA Yasuhisa , SHIN Shik , KOSHIDA Nobuyoshi , SUDA Yoshiyuki

    Oxidation states of porous Si, oxidized by oxygen excited by electron impact, have been analyzed using synchrotron radiation photoemission spectroscopy (SR-PES), Auger electron spectroscopy (AES), and …

    Japanese Journal of Applied Physics 35(7), L803-L806, 1996-07-01

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