Faculty of Science and Technology, Science University of Tokyo (1995年 CiNii収録論文より)

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  • Magnetically Excited Plasma Oxynitridation of Si at Room Temperature

    OKAMOTO Yoshinaga , NAGASAWA Hideaki , KITAYAMA Daiske , KITAJIMA Hiroyasu , IKOMA Hideaki

    Good electrical quality Si oxynitride was successfully grown at room temperature using magnetically excited ( N<SUB>2</SUB> + Ar) plasma. Si oxynitride, probably Si<SUB>2</SUB …

    Japanese Journal of Applied Physics 34(8), L955-L957, 1995-08-01

    J-STAGE  References (8)

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