Department of Materials Science, Faculty of Engineering, The University of Tokyo (1998年 CiNii収録論文より)

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  • Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy

    KOH Shinji , KONDO Takashi , ISHIWADA Tetsuya , IWAMOTO Chihiro , ICHINOSE Hideki , YAGUCHI Hiroyuki , USAMI Takanori , SHIRAKI Yasuhiro , ITO Ryoichi

    Sublattice reversal in III-V compound semiconductors grown on group-IV epitaxial layers on III-V substrates has been proposed for fabricating nonlinear optical devices with domain-inverted compound se …

    Japanese Journal of Applied Physics 37(12), L1493-L1496, 1998-12-01

    J-STAGE  References (16) Cited by (2)

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