Walter Schottky Institut, Technische Universitat Munchen (1999年 CiNii収録論文より)

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  • Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

    KELLY Michal K. , VAUDO Robert P. , PHANSE Vivek M. , GORGENS Lutz , AMBACHER Oliver , Stutzmann Martin

    Free-standing GaN, nearly equal in area to the original 2 inch wafer, was produced from 250-300 μm thick GaN films grown on sapphire by hydride vapor phase epitaxy (HVPE). The thick films were sepa …

    Japanese Journal of Applied Physics 38(3), 217-219, 1999-03-01

    J-STAGE  References (18) Cited by (8)

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