Nagahama Shin-ichi NAGAHAMA Shin-ichi

ID:9000045945500

Department of Research and Development, Nichia Chemical Industries, Ltd. (1998年 CiNii収録論文より)

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  • Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW

    NAKAMURA Shuji , SENOH Masayuki , NAGAHAMA Shin-ichi , IWASA Naruhito , YAMADA Takao , MATSUSHITA Toshio , KIYOKU Hiroyuki , SUGIMOTO Yasunobu , KOZAKI Tokuya , UMEMOTO Hitoshi , SANO Masahiko , CHOCHO Kazuyuki

    The InGaN multiquantum-well-structure laser diode (LD) was grown on epitaxially laterally overgrown GaN on sapphire. The LDs with cleaved mirror facets showed an output power as high as 420 mW per fac …

    Japanese Journal of Applied Physics 37(6), L627-L629, 1998-06-01

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