Hara Tohru HARA Tohru


Electrical Engineering, Hosei University (1997年 CiNii収録論文より)

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  • Barrier Properties for Oxygen Diffusion in a TaSiN Layer

    HARA Tohru , TANAKA Masaru , SAKIYAMA Keizo , ONISHI Shigeo , ISHIHARA Kazuya , KUDO Jun

    Annealing in O<SUB>2</SUB> at temperatures above 650<SUP>°</SUP> C is required for a thin ferroelectric capacitor. Reduction of the leakage current and an increase of capa …

    Japanese Journal of Applied Physics 36(7), L893-L895, 1997-07-01

    J-STAGE  References (8)

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