Aoki Y.

ID:9000046186989

Research Institute of Electronics, Graduate School of Electronic Science and Technology, Shizuoka University (1999年 CiNii収録論文より)

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Articles:  1-2 of 2

  • Laser doping technique for II-VI semiconductors, ZnSe and CdTe

    HATANAKA Y. , AOKI T. , NIRAULA M. , AOKI Y. , NAKANISHI Y.

    The p-type doping of wide band gap II-VI semiconductors is a key technology for the formation of ohmic contacts with metal electrodes in device fabrication. Using alkaline metal compounds such as Na_2 …

    IEICE technical report. Electronic information displays 98(665), 61-64, 1999-03-18

    References (9)

  • Laser doping technique for II-VI semiconductors, ZnSe and CdTe

    Hatanaka Y. , Aoki T. , Niraula M. , Aoki Y. , Nakanishi Y.

    The p-type doping of wide band gap II-VI semiconductors is a key technology for the formation of ohmic contacts with metal electrodes in device fabrication. Using alkaline metal compounds such as Na_2 …

    ITE Technical Report 23.26(0), 61-64, 1999

    J-STAGE  References (9)

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