Roqueta Fabrice ROQUETA Fabrice


L.M.P, Universite de Tours:STMicroelectronics (2002年 CiNii収録論文より)

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  • Gettering on Cavities Induced by Helium Implantation in Si: The Case of Boron

    ALQUIE Daniel , ROQUETA Fabrice , VENTURA Laurent , CAYREL Frederic , DUBOIS Christiane , JERISIAN Robert

    In this paper, we shed light on the strong interaction between the cavity layer induced by helium implantation and boron. First, we present the impact of the He gettering step on a boron-diffused prof …

    Japanese Journal of Applied Physics 41(6), 3625-3628, 2002-06-15

    J-STAGE  References (13)

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