Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) (2004年 CiNii収録論文より)

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  • P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs

    MASAHARA Meishoku , HOSOKAWA Shinichi , MATSUKAWA Takashi , ISHII Kenichi , LIU Yongxun , TANOUE Hisao , SAKAMOTO Kunihiro , YAMAUCHI Hiromi , KANEMARU Seigo , SUZUKI Eiichi

    It is experimentally demonstrated that the novel ion-bombardment-retarded etching (IBRE) process can be applied to fabricate p-channel (p-ch) vertical double-gate (DG) metal-oxide-semiconductor field- …

    Japanese Journal of Applied Physics 43(4), 2156-2159, 2004-04-30

    J-STAGE  DOI  References (22)

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