INATOMI Yuko

ID:9000244007409

Japan Aerospace Exploration Agency (2013年 CiNii収録論文より)

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  • The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method

    OMPRAKASH Muthusamy , ARIVANANDHAN Mukannan , ARUNKUMAR Raman , MORII Hisashi , AOKI Toru , KOYAMA Tadanobu , MOMOSE Yoshimi , IKEDA Hiroya , Tatsuoka Hirokazu , OKANO Yasunori , OZAWA Tetsuo , INATOMI Yuko , MOORTHYBABU Sridharan , HAYAKAWA Yasuhiro

    Si dissolution into Ge melt and crystal growth of SiGe was in-situ observed by X-ray penetration method. The rectangular shaped sandwich sample of Si (seed)/Ge/Si(feed) was used for the experiment. Th …

    Technical report of IEICE. SDM 113(41), 27-31, 2013-05-16

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