Aritome Hiroaki


Faculty of Engineering Science, Osaka University (1981年 CiNii収録論文より)

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  • Etched Profile of Si by Ion-Bombardment-Enhanced Etching

    Moriwaki Kazuyuki , Aritome Hiroaki , Namba Susumu

    The basic characteristics of the ion-bombardment-enhanced etching (IBEE) of Si are investigated, using 60 keV-Ar as the bombarding ion, with regard to its application to submicron lithography. The dam …

    Japanese Journal of Applied Physics 20(7), 1305-1309, 1981


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