Hagiwara Shingo


Department of Applied Physics, Faculty of Engineering, Tokai University (1990年 CiNii収録論文より)

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  • Energy Band Model of Undoped a-Ge:H Prepared by Plasma CVD

    Nakashita Toshio , Inoue Akira , Hagiwara Shingo , Haruki Satoshi , Uehara Fumiya

    The infrared absorption, electronic properties including dark- and photoconductivities and optical properties of hydrogenated amorphous Ge thin films prepared by rf plasma CVD method at a substrate te …

    Japanese Journal of Applied Physics 29pt1(5), 820-823, 1990


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