Matsuzawa Nobuyuki

ID:9000253028779

Yokohama Research Center, Association of Super-Advanced Electronics Technologies (ASET) 292 (1998年 CiNii収録論文より)

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  • Study of high photo-speed top surface imaging process using chemically amplified resist.

    Mori Shigeyasu , Matsuzawa Nobuyuki , Kaimoto Yuko , Endo Masayuki , Matsuo Takahiro , Morisawa Taku , Kuhara Koichi , Sasago Masaru

    A positive high photo-speed top surface imaging (TSI) process for 193-nm lithography has been achieved by incorporation a chemically amplified resist consisting of photo-acid generator (PAG), cross-li …

    Journal of Photopolymer Science and Technology 11(4), 613-618, 1998

    J-STAGE 

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