Kashihara Keiichiro

ID:9000258172344

LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp. (2004年 CiNii収録論文より)

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Articles:  1-1 of 1

  • Pt/BaxSr(1-x)TiO3/Pt Capacitor Technology for 0.15 .MU.m Embedded Dynamic Random Access Memory

    Tsunemine Yoshikazu , Tsuzumitani Akihiko , Ogawa Hisashi , Mori Yoshihiro , Okudaira Tomonori , Kashihara Keiichiro , Yutani Akie , Shinkawata Hiroki , Mazumder Motaharul Kabir , Ohno Yoshikazu , Yoneda Masahiro , Okuno Yasutoshi

    A novel capacitor technology has been developed for 0.15 μm embedded dynamic random access memory (DRAM). Platinum as electrodes and barium strontium titanate (BST) as dielectrics are used in the c …

    Japanese Journal of Applied Physics 43(5A), 2457-2461, 2004

    J-STAGE 

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