Kotsuji Setsu

ID:9000258181158

System Devices Research Laboratories, NEC Corporation (2005年 CiNii収録論文より)

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Articles:  1-1 of 1

  • Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node Low-Power HfSiON/SiO2 CMOSFETs

    Terai Masayuki , Watanabe Hirohito , Yabe Yuko , Fujieda Shinji , Morioka Ayuka , Kotsuji Setsu , Iwamoto Toshiyuki , Saitoh Motofumi , Ogura Takashi , Saito Yukishige

    The mechanisms of gate leakage current and that of time dependent dielectric breakdown (TDDB) failure of HfSiON/SiO<SUB>2</SUB> gate dielectrics having an equivalent oxide thickness of 1.6 …

    Japanese Journal of Applied Physics 44(4B), 2441-2446, 2005

    J-STAGE 

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