Iwaya Motoaki

ID:9000258181518

Faculty of Science and Technology, 21st-Century COE Program “Nano-Factory”, Meijo University (2005年 CiNii収録論文より)

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  • Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate

    Tsuchiya Yosuke , Okadome Yoshizane , Honshio Akira , Miyake Yasuto , Kawashima Takeshi , Iwaya Motoaki , Kamiyama Satoshi , Amano Hiroshi , Akasaki Isamu

    Mg-doped p-type a-plane GaN films were grown on high-quality unintentionally doped GaN on +0.5°-off r-plane sapphire substrates by metalorganic vapor phase epitaxy (MOVPE). A maximum hole concentr …

    Japanese Journal of Applied Physics 44(50-52), L1516-L1518, 2005

    J-STAGE 

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