坂根 仁 SAKANE Hitoshi

ID:9000261699529

住重試験検査株式会社 S.H.I. Examination & Inspection, Ltd. (2014年 CiNii収録論文より)

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  • Electromagnetic Simulation of High Resistance Silicon Substrate by Helium ion Irradiation  [in Japanese]

    YAO Yuki , HIRANO Takuichi , LI Ning , OKADA Kenichi , MATSUZAWA Akira , HIROKAWA Jiro , ANDO Makoto , INOUE Takeshi , MASAOKA Akinori , SAKANE Hitoshi

    A helium(He)-3 ion bombardment technique has been proposed for creating locally high resistivity silicon substrate areas. High resistivity silicon (Si) substrate is implemented by lattice defects caus …

    Technical report of IEICE. LQE 113(395), 181-185, 2014-01-23

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