Sugimoto Kanta

ID:9000300019122

Department of Electrical and Electronic Engineering, School of Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan. (2017年 CiNii収録論文より)

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論文一覧:  3件中 1-3 を表示

  • Crystal growth mechanism of Cu

    Sugimoto Kanta , Suyama Naoki , Nakada Kazuyoshi , Yamada Akira

    In this paper, we study the reaction mechanisms involved in the transformation from the precursor prepared with nanoparticles to the Cu<inf>2</inf>ZnSn(S,Se)<inf>4</inf>phase d …

    Jpn. J. Appl. Phys. 56(3), 035502, 2017-02-06

    応用物理学会

  • Characterization of CuInS

    Akaki Yoji , Sugimoto Kanta , Nakamura Shigeyuki , Yamaguchi Toshiyuki , Yoshino Kenji

    Cu–In–S thin films were deposited on glass substrates using single-source thermal evaporation with ternary compounds as source materials. Polycrystalline CuInS<inf>2</inf>pow …

    Jpn. J. Appl. Phys. 54(8S1), 08KC19, 2015-07-27

    応用物理学会

  • Microstructural characterization of Cu

    Zhang Yiwen , Suyama Naoki , Goto Masanori , Kuwana Jun , Sugimoto Kanta , Satake Tetsuo , Kurokawa Yasuyoshi , Yin Ming , Yamada Akira

    We characterized the microstructure of Cu<inf>2</inf>ZnSn(S,Se)<inf>4</inf>(CZTSSe) solar cells fabricated from Cu-poor, Zn-rich Cu<inf>2</inf>ZnSnSe<inf>4< …

    Jpn. J. Appl. Phys. 54(8S1), 08KC05, 2015-07-07

    応用物理学会

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