Matsumoto Akihiro

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  • Sputter epitaxy of heavily doped p

    Yeh Wenchang , Matsumoto Akihiro , Sugihara Keisuke

    Heavily doped p<sup>+</sup>or n<sup>+</sup>Ge films were grown on Si substrates by sputter epitaxy. Ge was cosputtered with Al or Sb to add dopant impurities. The maximum carri …

    Jpn. J. Appl. Phys. 54(8S1), 08KD08, 2015-07-08