Fujishima Kazuyasu

Articles:  1-1 of 1

  • A High-Capacitance Trench Structure (Hi-CAT) for Megabit LSI Memories

    Satoh Shin-ichi , Yoneda Masahiro , Fujishima Kazuyasu , Yamazaki Teruhiko

    A new memory capacitor named “Hi-CAT” has been developed and used in fabricating a 256 kbit dRAM. The Hi-CAT structure was produced by forming a trench on a P<SUP>−</SUP> …

    Japanese Journal of Applied Physics 24pt1(7), 832-835, 1985

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