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Jérôme J. Lacroix, Francisco Bezanilla Proceedings of the National Academy of Sciences 108 (16), 6444-6449, 2011-04-04

...These effects are well correlated with the hydrophobicity of the substituted residue, showing that a hydrophobic residue at position 290 controls the energy barrier of the final gating transition....

DOI Web Site 被引用文献1件

Matty R. Caymax, Frederik Leys, Jerome Mitard, Koen Martens, Lijun Yang, Geoffrey Pourtois, Wilfried Vandervorst, Marc Meuris, Roger Loo ECS Transactions 19 (1), 183-194, 2009-05-15

...We found that surface segregation of Ge through the Si layer takes place during the growth, which turns out to be determining for the interfacial trap density and distribution in the finalized gate stack...

DOI Web Site Web Site ほか1件 被引用文献2件

Davood Shahrjerdi, Emanuel Tutuc, Sanjay K. Banerjee Applied Physics Letters 91 (6), 063501-, 2007-08-06

...However, Ga–O bonds appear to incorporate in the final gate stack at the Al2O3∕GaAs interface....

DOI PDF 被引用文献7件

L. Bürgi, R. H. Friend, H. Sirringhaus Applied Physics Letters 82 (9), 1482-1484, 2003-03-03

...The charge density exponentially approaches its final value with a time constant given by L2/μ|Vg|π2, where L is the characteristic device dimension, μ the field-effect mobility, and Vg the final gate...

DOI PDF 被引用文献5件

Jennifer L. Ledwell, Richard W. Aldrich The Journal of General Physiology 113 (3), 389-414, 1999-03-01

...The charge movement associated with the final gating transition in ILT activation can be measured as an isolated component of charge movement in the voltage range of channel opening and accounts for 13%...

DOI PDF 被引用文献1件